In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks

The design of solution-processed thermoelectric nanomaterials with efficient, stable performance remains a challenge. Here, the authors report an in-situ doping method based on nanoscale interface engineering to realize n-type thermoelectric nanowires with high performance and stability.

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Detalles Bibliográficos
Autores principales: Ayaskanta Sahu, Boris Russ, Miao Liu, Fan Yang, Edmond W. Zaia, Madeleine P. Gordon, Jason D. Forster, Ya-Qian Zhang, Mary C. Scott, Kristin A. Persson, Nelson E. Coates, Rachel A. Segalman, Jeffrey J. Urban
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/ea272a98ddaa42608050f52ffbc0c977
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