In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks
The design of solution-processed thermoelectric nanomaterials with efficient, stable performance remains a challenge. Here, the authors report an in-situ doping method based on nanoscale interface engineering to realize n-type thermoelectric nanowires with high performance and stability.
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| Autores principales: | , , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/ea272a98ddaa42608050f52ffbc0c977 |
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| Sumario: | The design of solution-processed thermoelectric nanomaterials with efficient, stable performance remains a challenge. Here, the authors report an in-situ doping method based on nanoscale interface engineering to realize n-type thermoelectric nanowires with high performance and stability. |
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