In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks

The design of solution-processed thermoelectric nanomaterials with efficient, stable performance remains a challenge. Here, the authors report an in-situ doping method based on nanoscale interface engineering to realize n-type thermoelectric nanowires with high performance and stability.

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Autores principales:	Ayaskanta Sahu, Boris Russ, Miao Liu, Fan Yang, Edmond W. Zaia, Madeleine P. Gordon, Jason D. Forster, Ya-Qian Zhang, Mary C. Scott, Kristin A. Persson, Nelson E. Coates, Rachel A. Segalman, Jeffrey J. Urban
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/ea272a98ddaa42608050f52ffbc0c977
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spelling	oai:doaj.org-article:ea272a98ddaa42608050f52ffbc0c9772021-12-02T15:33:53ZIn-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks10.1038/s41467-020-15933-22041-1723https://doaj.org/article/ea272a98ddaa42608050f52ffbc0c9772020-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-15933-2https://doaj.org/toc/2041-1723The design of solution-processed thermoelectric nanomaterials with efficient, stable performance remains a challenge. Here, the authors report an in-situ doping method based on nanoscale interface engineering to realize n-type thermoelectric nanowires with high performance and stability.Ayaskanta SahuBoris RussMiao LiuFan YangEdmond W. ZaiaMadeleine P. GordonJason D. ForsterYa-Qian ZhangMary C. ScottKristin A. PerssonNelson E. CoatesRachel A. SegalmanJeffrey J. UrbanNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-12 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Ayaskanta Sahu Boris Russ Miao Liu Fan Yang Edmond W. Zaia Madeleine P. Gordon Jason D. Forster Ya-Qian Zhang Mary C. Scott Kristin A. Persson Nelson E. Coates Rachel A. Segalman Jeffrey J. Urban In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks
description	The design of solution-processed thermoelectric nanomaterials with efficient, stable performance remains a challenge. Here, the authors report an in-situ doping method based on nanoscale interface engineering to realize n-type thermoelectric nanowires with high performance and stability.
format	article
author	Ayaskanta Sahu Boris Russ Miao Liu Fan Yang Edmond W. Zaia Madeleine P. Gordon Jason D. Forster Ya-Qian Zhang Mary C. Scott Kristin A. Persson Nelson E. Coates Rachel A. Segalman Jeffrey J. Urban
author_facet	Ayaskanta Sahu Boris Russ Miao Liu Fan Yang Edmond W. Zaia Madeleine P. Gordon Jason D. Forster Ya-Qian Zhang Mary C. Scott Kristin A. Persson Nelson E. Coates Rachel A. Segalman Jeffrey J. Urban
author_sort	Ayaskanta Sahu
title	In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks
title_short	In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks
title_full	In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks
title_fullStr	In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks
title_full_unstemmed	In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks
title_sort	in-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/ea272a98ddaa42608050f52ffbc0c977
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In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks

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