Fabrication Of p-NiO/n-ZnO:Ga heterostructures for a rectifier diode and a UV photodetector via RF magnetron sputtering and spray pyrolysis synthesis

Fabrication Of p-NiO/n-ZnO:Ga heterostructures for a rectifier diode and a UV photodetector via RF magnetron sputtering and spray pyrolysis synthesis

In this paper, a p–n thin film NiO/ZnO heterojunction for a rectifier diode and a UV photodetector is prepared and characterized. Nickel oxide (NiO) and gallium-doped zinc oxide (ZnO:Ga) thin films are grown by RF magnetron sputtering and spray pyrolysis techniques, respectively. The crystal structu...

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Autores principales: Ghimpu Lidia, Suman Victor, Rusnac Dumitru, Potlog Tamara
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2021
Materias:
RF magnetron sputtering
spray pyrolysis
UV–VIS spectroscopy
Electrical properties
pulverizare cu magnetron RF
piroliză prin pulverizare
spectroscopie UV–VIS
proprietăți electrice
Physics
QC1-999
Electronics
TK7800-8360
Acceso en línea:https://doi.org/10.53081/mjps.2021.20-1.05
https://doaj.org/article/ea6216647a2f42a28f3882dbbb002cb9
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https://doi.org/10.53081/mjps.2021.20-1.05
https://doaj.org/article/ea6216647a2f42a28f3882dbbb002cb9

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