Fabrication Of p-NiO/n-ZnO:Ga heterostructures for a rectifier diode and a UV photodetector via RF magnetron sputtering and spray pyrolysis synthesis
In this paper, a p–n thin film NiO/ZnO heterojunction for a rectifier diode and a UV photodetector is prepared and characterized. Nickel oxide (NiO) and gallium-doped zinc oxide (ZnO:Ga) thin films are grown by RF magnetron sputtering and spray pyrolysis techniques, respectively. The crystal structu...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2021
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| Materias: | |
| Acceso en línea: | https://doi.org/10.53081/mjps.2021.20-1.05 https://doaj.org/article/ea6216647a2f42a28f3882dbbb002cb9 |
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