The X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor

The photoconductor layer is an important component of direct conversion flat panel X-ray imagers (FPXI); thus, it should be carefully selected to meet the requirements for the X-ray imaging detector, and its properties should be clearly understood to develop the most optimal detector design. Current...

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Autores principales:	Oleksandr Grynko, Tristen Thibault, Emma Pineau, Alla Reznik
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	lead oxide X-ray detector direct conversion X-ray sensitivity columnar recombination Langevin recombination Chemical technology TP1-1185
Acceso en línea:	https://doaj.org/article/ec9a7f0197154f28b71200b3481b90bf
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spelling	oai:doaj.org-article:ec9a7f0197154f28b71200b3481b90bf2021-11-11T19:16:07ZThe X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor10.3390/s212173211424-8220https://doaj.org/article/ec9a7f0197154f28b71200b3481b90bf2021-11-01T00:00:00Zhttps://www.mdpi.com/1424-8220/21/21/7321https://doaj.org/toc/1424-8220The photoconductor layer is an important component of direct conversion flat panel X-ray imagers (FPXI); thus, it should be carefully selected to meet the requirements for the X-ray imaging detector, and its properties should be clearly understood to develop the most optimal detector design. Currently, amorphous selenium (a-Se) is the only photoconductor utilized in commercial direct conversion FPXIs for low-energy mammographic imaging, but it is not practically feasible for higher-energy diagnostic imaging. Amorphous lead oxide (a-PbO) photoconductor is considered as a replacement to a-Se in radiography, fluoroscopy, and tomosynthesis applications. In this work, we investigated the X-ray sensitivity of a-PbO, one of the most important parameters for X-ray photoconductors, and examined the underlying mechanisms responsible for charge generation and recombination. The X-ray sensitivity in terms of electron–hole pair creation energy, <i>W<sub>±</sub></i>, was measured in a range of electric fields, X-ray energies, and exposure levels. <i>W<sub>±</sub></i> decreases with the electric field and X-ray energy, saturating at 18–31 eV/ehp, depending on the energy of X-rays, but increases with the exposure rate. The peculiar dependencies of <i>W<sub>±</sub></i> on these parameters lead to a conclusion that, at electric fields relevant to detector operation (~10 V/μm), the columnar recombination and the bulk recombination mechanisms interplay in the a-PbO photoconductor.Oleksandr GrynkoTristen ThibaultEmma PineauAlla ReznikMDPI AGarticlelead oxideX-ray detectordirect conversionX-ray sensitivitycolumnar recombinationLangevin recombinationChemical technologyTP1-1185ENSensors, Vol 21, Iss 7321, p 7321 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	lead oxide X-ray detector direct conversion X-ray sensitivity columnar recombination Langevin recombination Chemical technology TP1-1185
spellingShingle	lead oxide X-ray detector direct conversion X-ray sensitivity columnar recombination Langevin recombination Chemical technology TP1-1185 Oleksandr Grynko Tristen Thibault Emma Pineau Alla Reznik The X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor
description	The photoconductor layer is an important component of direct conversion flat panel X-ray imagers (FPXI); thus, it should be carefully selected to meet the requirements for the X-ray imaging detector, and its properties should be clearly understood to develop the most optimal detector design. Currently, amorphous selenium (a-Se) is the only photoconductor utilized in commercial direct conversion FPXIs for low-energy mammographic imaging, but it is not practically feasible for higher-energy diagnostic imaging. Amorphous lead oxide (a-PbO) photoconductor is considered as a replacement to a-Se in radiography, fluoroscopy, and tomosynthesis applications. In this work, we investigated the X-ray sensitivity of a-PbO, one of the most important parameters for X-ray photoconductors, and examined the underlying mechanisms responsible for charge generation and recombination. The X-ray sensitivity in terms of electron–hole pair creation energy, <i>W<sub>±</sub></i>, was measured in a range of electric fields, X-ray energies, and exposure levels. <i>W<sub>±</sub></i> decreases with the electric field and X-ray energy, saturating at 18–31 eV/ehp, depending on the energy of X-rays, but increases with the exposure rate. The peculiar dependencies of <i>W<sub>±</sub></i> on these parameters lead to a conclusion that, at electric fields relevant to detector operation (~10 V/μm), the columnar recombination and the bulk recombination mechanisms interplay in the a-PbO photoconductor.
format	article
author	Oleksandr Grynko Tristen Thibault Emma Pineau Alla Reznik
author_facet	Oleksandr Grynko Tristen Thibault Emma Pineau Alla Reznik
author_sort	Oleksandr Grynko
title	The X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor
title_short	The X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor
title_full	The X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor
title_fullStr	The X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor
title_full_unstemmed	The X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor
title_sort	x-ray sensitivity of an amorphous lead oxide photoconductor
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/ec9a7f0197154f28b71200b3481b90bf
work_keys_str_mv	AT oleksandrgrynko thexraysensitivityofanamorphousleadoxidephotoconductor AT tristenthibault thexraysensitivityofanamorphousleadoxidephotoconductor AT emmapineau thexraysensitivityofanamorphousleadoxidephotoconductor AT allareznik thexraysensitivityofanamorphousleadoxidephotoconductor AT oleksandrgrynko xraysensitivityofanamorphousleadoxidephotoconductor AT tristenthibault xraysensitivityofanamorphousleadoxidephotoconductor AT emmapineau xraysensitivityofanamorphousleadoxidephotoconductor AT allareznik xraysensitivityofanamorphousleadoxidephotoconductor
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The X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor

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