Evolution of defect formation during atomically precise desulfurization of monolayer MoS2
Desulfurization of MoS2 alters its chemical and physical properties by breaking structural symmetry. Here, the atomic-scale mechanistic pathway by which this occurs is investigated during plasma etching, and changes in chemical structure and physical properties are revealed.
Guardado en:
Autores principales: | Jong-Young Lee, Jong Hun Kim, Yeonjoon Jung, June Chul Shin, Yangjin Lee, Kwanpyo Kim, Namwon Kim, Arend M. van der Zande, Jangyup Son, Gwan-Hyoung Lee |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/ed299cd15c9141ce92bfacd76719fb4d |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Giant persistent photoconductivity in monolayer MoS2 field-effect transistors
por: A. George, et al.
Publicado: (2021) -
Quantifying photoinduced carriers transport in exciton–polariton coupling of MoS2 monolayers
por: Min-Wen Yu, et al.
Publicado: (2021) -
Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors
por: Heekyeong Park, et al.
Publicado: (2021) -
Origins of genuine Ohmic van der Waals contact between indium and MoS2
por: Bum-Kyu Kim, et al.
Publicado: (2021) -
Moiré-related in-gap states in a twisted MoS2/graphite heterojunction
por: Chun-I Lu, et al.
Publicado: (2017)