Separation of current density and electric field domains caused by nonlinear electronic instabilities

The usefulness of metal-oxide memristors for memory and brain-inspired computing applications arises from their electronic instabilities, whose details remain limited. In this work, the authors analyze electronic decompositions in several metal oxides, providing new insights for device modeling.

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Detalles Bibliográficos
Autores principales: Suhas Kumar, R. Stanley Williams
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Q
Acceso en línea:https://doaj.org/article/ed68effb921d404caecda2e65394df2a
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