Separation of current density and electric field domains caused by nonlinear electronic instabilities
The usefulness of metal-oxide memristors for memory and brain-inspired computing applications arises from their electronic instabilities, whose details remain limited. In this work, the authors analyze electronic decompositions in several metal oxides, providing new insights for device modeling.
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/ed68effb921d404caecda2e65394df2a |
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