Separation of current density and electric field domains caused by nonlinear electronic instabilities
The usefulness of metal-oxide memristors for memory and brain-inspired computing applications arises from their electronic instabilities, whose details remain limited. In this work, the authors analyze electronic decompositions in several metal oxides, providing new insights for device modeling.
Saved in:
| Main Authors: | , |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2018
|
| Subjects: | |
| Online Access: | https://doaj.org/article/ed68effb921d404caecda2e65394df2a |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|