CH3NH3PbX3 (X = I, Br) encapsulated in silicon carbide/carbon nanotube as advanced diodes
Abstract We employ first-principles density functional theory (DFT) calculations to study CH3NH3PbX3 (X = I, Br) and its encapsulation into the silicon carbide nanotube and carbon nanotube (CNT). Our results indicate that these devices show diode behaviors which act on negative bias voltage but do n...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/ed7f29c91c4c43eebe4e42b46c62f591 |
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