Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]

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Autores principales:	Li-E. Cai, Chao-Zhi Xu, Fei-Bing Xiong, Ming-Jie Zhao, Hai-Feng Lin, Hong-Yi Lin, Dong Sun
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/ee695f3cf71b4c77a70594a2e23b96e8
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spelling	oai:doaj.org-article:ee695f3cf71b4c77a70594a2e23b96e82021-12-01T18:52:07ZErratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]2158-322610.1063/5.0065563https://doaj.org/article/ee695f3cf71b4c77a70594a2e23b96e82021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0065563https://doaj.org/toc/2158-3226Li-E. CaiChao-Zhi XuFei-Bing XiongMing-Jie ZhaoHai-Feng LinHong-Yi LinDong SunAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 119901-119901-1 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Li-E. Cai Chao-Zhi Xu Fei-Bing Xiong Ming-Jie Zhao Hai-Feng Lin Hong-Yi Lin Dong Sun Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]
format	article
author	Li-E. Cai Chao-Zhi Xu Fei-Bing Xiong Ming-Jie Zhao Hai-Feng Lin Hong-Yi Lin Dong Sun
author_facet	Li-E. Cai Chao-Zhi Xu Fei-Bing Xiong Ming-Jie Zhao Hai-Feng Lin Hong-Yi Lin Dong Sun
author_sort	Li-E. Cai
title	Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]
title_short	Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]
title_full	Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]
title_fullStr	Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]
title_full_unstemmed	Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]
title_sort	erratum: “improved carrier confinement and distribution in ingan light-emitting diodes with three-layer staggered qws” [aip adv. 11, 075027 (2021)]
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/ee695f3cf71b4c77a70594a2e23b96e8
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Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]

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