Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]

Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]

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Bibliographic Details
Main Authors: Li-E. Cai, Chao-Zhi Xu, Fei-Bing Xiong, Ming-Jie Zhao, Hai-Feng Lin, Hong-Yi Lin, Dong Sun
Format: article
Language:EN
Published: AIP Publishing LLC 2021
Subjects:
Physics
QC1-999
Online Access:https://doaj.org/article/ee695f3cf71b4c77a70594a2e23b96e8
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