Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]
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| Main Authors: | , , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
AIP Publishing LLC
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/ee695f3cf71b4c77a70594a2e23b96e8 |
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