Size-induced twinning in InSb semiconductor during room temperature deformation

Abstract Room-temperature deformation mechanism of InSb micro-pillars has been investigated via a multi-scale experimental approach, where micro-pillars of 2 µm and 5 µm in diameter were first fabricated by focused ion beam (FIB) milling and in situ deformed in the FIB-SEM by micro-compression using...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Florent Mignerot, Bouzid Kedjar, Hadi Bahsoun, Ludovic Thilly
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
R
Q
Acceso en línea:https://doaj.org/article/eec5722fb7794ca682d1d4ddece1be6b
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!