Size-induced twinning in InSb semiconductor during room temperature deformation

Abstract Room-temperature deformation mechanism of InSb micro-pillars has been investigated via a multi-scale experimental approach, where micro-pillars of 2 µm and 5 µm in diameter were first fabricated by focused ion beam (FIB) milling and in situ deformed in the FIB-SEM by micro-compression using...

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Autores principales:	Florent Mignerot, Bouzid Kedjar, Hadi Bahsoun, Ludovic Thilly
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/eec5722fb7794ca682d1d4ddece1be6b
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spelling	oai:doaj.org-article:eec5722fb7794ca682d1d4ddece1be6b2021-12-02T19:16:46ZSize-induced twinning in InSb semiconductor during room temperature deformation10.1038/s41598-021-98492-w2045-2322https://doaj.org/article/eec5722fb7794ca682d1d4ddece1be6b2021-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-98492-whttps://doaj.org/toc/2045-2322Abstract Room-temperature deformation mechanism of InSb micro-pillars has been investigated via a multi-scale experimental approach, where micro-pillars of 2 µm and 5 µm in diameter were first fabricated by focused ion beam (FIB) milling and in situ deformed in the FIB-SEM by micro-compression using a nano-indenter equipped with a flat tip. Strain rate jumps have been performed to determine the strain rate sensitivity coefficient and the related activation volume. The activation volume is found to be of the order of 3–5 b3, considering that plasticity is mediated by Shockley partial dislocations. Transmission electron microscopy (TEM) thin foils were extracted from deformed micro-pillars via the FIB lift-out technique: TEM analysis reveals the presence of nano-twins as major mechanism of plastic deformation, involving Shockley partial dislocations. The presence of twins was never reported in previous studies on the plasticity of bulk InSb: this deformation mechanism is discussed in the context of the plasticity of small-scale samples.Florent MignerotBouzid KedjarHadi BahsounLudovic ThillyNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Florent Mignerot Bouzid Kedjar Hadi Bahsoun Ludovic Thilly Size-induced twinning in InSb semiconductor during room temperature deformation
description	Abstract Room-temperature deformation mechanism of InSb micro-pillars has been investigated via a multi-scale experimental approach, where micro-pillars of 2 µm and 5 µm in diameter were first fabricated by focused ion beam (FIB) milling and in situ deformed in the FIB-SEM by micro-compression using a nano-indenter equipped with a flat tip. Strain rate jumps have been performed to determine the strain rate sensitivity coefficient and the related activation volume. The activation volume is found to be of the order of 3–5 b3, considering that plasticity is mediated by Shockley partial dislocations. Transmission electron microscopy (TEM) thin foils were extracted from deformed micro-pillars via the FIB lift-out technique: TEM analysis reveals the presence of nano-twins as major mechanism of plastic deformation, involving Shockley partial dislocations. The presence of twins was never reported in previous studies on the plasticity of bulk InSb: this deformation mechanism is discussed in the context of the plasticity of small-scale samples.
format	article
author	Florent Mignerot Bouzid Kedjar Hadi Bahsoun Ludovic Thilly
author_facet	Florent Mignerot Bouzid Kedjar Hadi Bahsoun Ludovic Thilly
author_sort	Florent Mignerot
title	Size-induced twinning in InSb semiconductor during room temperature deformation
title_short	Size-induced twinning in InSb semiconductor during room temperature deformation
title_full	Size-induced twinning in InSb semiconductor during room temperature deformation
title_fullStr	Size-induced twinning in InSb semiconductor during room temperature deformation
title_full_unstemmed	Size-induced twinning in InSb semiconductor during room temperature deformation
title_sort	size-induced twinning in insb semiconductor during room temperature deformation
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/eec5722fb7794ca682d1d4ddece1be6b
work_keys_str_mv	AT florentmignerot sizeinducedtwinningininsbsemiconductorduringroomtemperaturedeformation AT bouzidkedjar sizeinducedtwinningininsbsemiconductorduringroomtemperaturedeformation AT hadibahsoun sizeinducedtwinningininsbsemiconductorduringroomtemperaturedeformation AT ludovicthilly sizeinducedtwinningininsbsemiconductorduringroomtemperaturedeformation
_version_	1718376947097010176

Size-induced twinning in InSb semiconductor during room temperature deformation

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