Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was o...
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Institue of Optics and Electronics, Chinese Academy of Sciences
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/f0d56e4bf7b445e583ceaa89ff012830 |
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