Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was o...

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Autores principales:	Kumar Kalapala Akhil Raj, Liu Dong, Cho Sang June, Park Jeongpil, Zhao Deyin, Albrecht John D., Moody Baxter, Ma Zhenqiang, Zhou Weidong
Formato:	article
Lenguaje:	EN
Publicado:	Institue of Optics and Electronics, Chinese Academy of Sciences 2020
Materias:	optically pumped algan uv edge emitting laser aln substrate Optics. Light QC350-467
Acceso en línea:	https://doaj.org/article/f0d56e4bf7b445e583ceaa89ff012830
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spelling	oai:doaj.org-article:f0d56e4bf7b445e583ceaa89ff0128302021-11-10T10:12:50ZOptically pumped room temperature low threshold deep UV lasers grown on native AlN substrates2096-457910.29026/oea.2020.190025https://doaj.org/article/f0d56e4bf7b445e583ceaa89ff0128302020-04-01T00:00:00Zhttp://www.oejournal.org/article/doi/10.29026/oea.2020.190025https://doaj.org/toc/2096-4579We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV excimer laser source. A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm2. The emission is completely TE polarized and the side mode suppression ratio (SMSR) is measured to be around 14 dB at 450 kW/cm2.Kumar Kalapala Akhil RajLiu DongCho Sang JunePark JeongpilZhao DeyinAlbrecht John D.Moody BaxterMa ZhenqiangZhou WeidongInstitue of Optics and Electronics, Chinese Academy of Sciencesarticleoptically pumpedalganuv edge emitting laseraln substrateOptics. LightQC350-467ENOpto-Electronic Advances, Vol 3, Iss 4, Pp 190025-1-190025-6 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	optically pumped algan uv edge emitting laser aln substrate Optics. Light QC350-467
spellingShingle	optically pumped algan uv edge emitting laser aln substrate Optics. Light QC350-467 Kumar Kalapala Akhil Raj Liu Dong Cho Sang June Park Jeongpil Zhao Deyin Albrecht John D. Moody Baxter Ma Zhenqiang Zhou Weidong Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
description	We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV excimer laser source. A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm2. The emission is completely TE polarized and the side mode suppression ratio (SMSR) is measured to be around 14 dB at 450 kW/cm2.
format	article
author	Kumar Kalapala Akhil Raj Liu Dong Cho Sang June Park Jeongpil Zhao Deyin Albrecht John D. Moody Baxter Ma Zhenqiang Zhou Weidong
author_facet	Kumar Kalapala Akhil Raj Liu Dong Cho Sang June Park Jeongpil Zhao Deyin Albrecht John D. Moody Baxter Ma Zhenqiang Zhou Weidong
author_sort	Kumar Kalapala Akhil Raj
title	Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
title_short	Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
title_full	Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
title_fullStr	Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
title_full_unstemmed	Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
title_sort	optically pumped room temperature low threshold deep uv lasers grown on native aln substrates
publisher	Institue of Optics and Electronics, Chinese Academy of Sciences
publishDate	2020
url	https://doaj.org/article/f0d56e4bf7b445e583ceaa89ff012830
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Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

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