Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was o...

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Autores principales: Kumar Kalapala Akhil Raj, Liu Dong, Cho Sang June, Park Jeongpil, Zhao Deyin, Albrecht John D., Moody Baxter, Ma Zhenqiang, Zhou Weidong
Formato: article
Lenguaje:EN
Publicado: Institue of Optics and Electronics, Chinese Academy of Sciences 2020
Materias:
optically pumped
algan
uv edge emitting laser
aln substrate
Optics. Light
QC350-467
Acceso en línea:https://doaj.org/article/f0d56e4bf7b445e583ceaa89ff012830
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