Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity

Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity

We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. B...

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Détails bibliographiques
Auteurs principaux: Sk Ziaur Rahaman, I-Jung Wang, Ding-Yeong Wang, Chi-Feng Pai, Yu-Chen Hsin, Shan-Yi Yang, Hsin-Han Lee, Yao-Jen Chang, Yi-Ching Kuo, Yi-Hui Su, Guan-Long Chen, Fang-Ming Chen, Jeng-Hua Wei, Tuo-Hung Hou, Shyh-Shyuan Sheu, Chih-I Wu, Duan-Lee Deng
Format: article
Langue:EN
Publié: IEEE 2020
Sujets:
Spintronics
spin-orbit torque
spin-transfer torque
spin-hall effect
magnetic tunnel junction
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Accès en ligne:https://doaj.org/article/f0f3a62054ee4f20ac4fdbc9293e0221
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https://doaj.org/article/f0f3a62054ee4f20ac4fdbc9293e0221

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