Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity
We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. B...
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2020
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oai:doaj.org-article:f0f3a62054ee4f20ac4fdbc9293e02212021-11-19T00:01:13ZSize-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity2168-673410.1109/JEDS.2020.2971892https://doaj.org/article/f0f3a62054ee4f20ac4fdbc9293e02212020-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8984374/https://doaj.org/toc/2168-6734We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor (<inline-formula> <tex-math notation="LaTeX">${\Delta }$ </tex-math></inline-formula>) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology.Sk Ziaur RahamanI-Jung WangDing-Yeong WangChi-Feng PaiYu-Chen HsinShan-Yi YangHsin-Han LeeYao-Jen ChangYi-Ching KuoYi-Hui SuGuan-Long ChenFang-Ming ChenJeng-Hua WeiTuo-Hung HouShyh-Shyuan SheuChih-I WuDuan-Lee DengIEEEarticleSpintronicsspin-orbit torquespin-transfer torquespin-hall effectmagnetic tunnel junctionElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 8, Pp 163-169 (2020) |
| institution |
DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
Spintronics spin-orbit torque spin-transfer torque spin-hall effect magnetic tunnel junction Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
| spellingShingle |
Spintronics spin-orbit torque spin-transfer torque spin-hall effect magnetic tunnel junction Electrical engineering. Electronics. Nuclear engineering TK1-9971 Sk Ziaur Rahaman I-Jung Wang Ding-Yeong Wang Chi-Feng Pai Yu-Chen Hsin Shan-Yi Yang Hsin-Han Lee Yao-Jen Chang Yi-Ching Kuo Yi-Hui Su Guan-Long Chen Fang-Ming Chen Jeng-Hua Wei Tuo-Hung Hou Shyh-Shyuan Sheu Chih-I Wu Duan-Lee Deng Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity |
| description |
We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor (<inline-formula> <tex-math notation="LaTeX">${\Delta }$ </tex-math></inline-formula>) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology. |
| format |
article |
| author |
Sk Ziaur Rahaman I-Jung Wang Ding-Yeong Wang Chi-Feng Pai Yu-Chen Hsin Shan-Yi Yang Hsin-Han Lee Yao-Jen Chang Yi-Ching Kuo Yi-Hui Su Guan-Long Chen Fang-Ming Chen Jeng-Hua Wei Tuo-Hung Hou Shyh-Shyuan Sheu Chih-I Wu Duan-Lee Deng |
| author_facet |
Sk Ziaur Rahaman I-Jung Wang Ding-Yeong Wang Chi-Feng Pai Yu-Chen Hsin Shan-Yi Yang Hsin-Han Lee Yao-Jen Chang Yi-Ching Kuo Yi-Hui Su Guan-Long Chen Fang-Ming Chen Jeng-Hua Wei Tuo-Hung Hou Shyh-Shyuan Sheu Chih-I Wu Duan-Lee Deng |
| author_sort |
Sk Ziaur Rahaman |
| title |
Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity |
| title_short |
Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity |
| title_full |
Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity |
| title_fullStr |
Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity |
| title_full_unstemmed |
Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity |
| title_sort |
size-dependent switching properties of spin-orbit torque mram with manufacturing-friendly 8-inch wafer-level uniformity |
| publisher |
IEEE |
| publishDate |
2020 |
| url |
https://doaj.org/article/f0f3a62054ee4f20ac4fdbc9293e0221 |
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