Impact of device scaling on the electrical properties of MoS2 field-effect transistors

Abstract Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 de...

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Autores principales:	Goutham Arutchelvan, Quentin Smets, Devin Verreck, Zubair Ahmed, Abhinav Gaur, Surajit Sutar, Julien Jussot, Benjamin Groven, Marc Heyns, Dennis Lin, Inge Asselberghs, Iuliana Radu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/f132e126bb2d4a5abc877181c5dbd890
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spelling	oai:doaj.org-article:f132e126bb2d4a5abc877181c5dbd8902021-12-02T17:04:06ZImpact of device scaling on the electrical properties of MoS2 field-effect transistors10.1038/s41598-021-85968-y2045-2322https://doaj.org/article/f132e126bb2d4a5abc877181c5dbd8902021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-85968-yhttps://doaj.org/toc/2045-2322Abstract Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS2 material with channel length down to 30 nm, contact length down to 13 nm and capacitive effective oxide thickness (CET) down to 1.9 nm. These devices show best-in-class performance with transconductance of 185 μS/μm and a minimum subthreshold swing (SS) of 86 mV/dec. We find that scaling the top-contact length has no impact on the contact resistance and electrostatics of three monolayers MoS2 transistors, because edge injection is dominant. Further, we identify that SS degradation occurs at short channel length and can be mitigated by reducing the CET and lowering the Schottky barrier height. Finally, using a power performance area (PPA) analysis, we present a roadmap of material improvements to make 2D devices competitive with silicon gate-all-around devices.Goutham ArutchelvanQuentin SmetsDevin VerreckZubair AhmedAbhinav GaurSurajit SutarJulien JussotBenjamin GrovenMarc HeynsDennis LinInge AsselberghsIuliana RaduNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Goutham Arutchelvan Quentin Smets Devin Verreck Zubair Ahmed Abhinav Gaur Surajit Sutar Julien Jussot Benjamin Groven Marc Heyns Dennis Lin Inge Asselberghs Iuliana Radu Impact of device scaling on the electrical properties of MoS2 field-effect transistors
description	Abstract Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS2 material with channel length down to 30 nm, contact length down to 13 nm and capacitive effective oxide thickness (CET) down to 1.9 nm. These devices show best-in-class performance with transconductance of 185 μS/μm and a minimum subthreshold swing (SS) of 86 mV/dec. We find that scaling the top-contact length has no impact on the contact resistance and electrostatics of three monolayers MoS2 transistors, because edge injection is dominant. Further, we identify that SS degradation occurs at short channel length and can be mitigated by reducing the CET and lowering the Schottky barrier height. Finally, using a power performance area (PPA) analysis, we present a roadmap of material improvements to make 2D devices competitive with silicon gate-all-around devices.
format	article
author	Goutham Arutchelvan Quentin Smets Devin Verreck Zubair Ahmed Abhinav Gaur Surajit Sutar Julien Jussot Benjamin Groven Marc Heyns Dennis Lin Inge Asselberghs Iuliana Radu
author_facet	Goutham Arutchelvan Quentin Smets Devin Verreck Zubair Ahmed Abhinav Gaur Surajit Sutar Julien Jussot Benjamin Groven Marc Heyns Dennis Lin Inge Asselberghs Iuliana Radu
author_sort	Goutham Arutchelvan
title	Impact of device scaling on the electrical properties of MoS2 field-effect transistors
title_short	Impact of device scaling on the electrical properties of MoS2 field-effect transistors
title_full	Impact of device scaling on the electrical properties of MoS2 field-effect transistors
title_fullStr	Impact of device scaling on the electrical properties of MoS2 field-effect transistors
title_full_unstemmed	Impact of device scaling on the electrical properties of MoS2 field-effect transistors
title_sort	impact of device scaling on the electrical properties of mos2 field-effect transistors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/f132e126bb2d4a5abc877181c5dbd890
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Impact of device scaling on the electrical properties of MoS2 field-effect transistors

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