Impact of device scaling on the electrical properties of MoS2 field-effect transistors

Impact of device scaling on the electrical properties of MoS2 field-effect transistors

Abstract Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 de...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Goutham Arutchelvan, Quentin Smets, Devin Verreck, Zubair Ahmed, Abhinav Gaur, Surajit Sutar, Julien Jussot, Benjamin Groven, Marc Heyns, Dennis Lin, Inge Asselberghs, Iuliana Radu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/f132e126bb2d4a5abc877181c5dbd890
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Ejemplares similares