Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy

Deep-level transient spectroscopy (DLTS) using Schottky barrier diodes (SBDs) is widely used for quantitative analysis of deep levels. This study focuses on the dependence of Schottky barrier height on apparent time constants and concentrations of electron traps in n-type GaN. DLTS using SBDs with v...

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Autores principales:	Keito Aoshima, Masahiro Horita, Jun Suda
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/f3d96455a139438ba98fcf08bcd2bd92
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spelling	oai:doaj.org-article:f3d96455a139438ba98fcf08bcd2bd922021-12-01T18:52:06ZEffect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy2158-322610.1063/5.0073747https://doaj.org/article/f3d96455a139438ba98fcf08bcd2bd922021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0073747https://doaj.org/toc/2158-3226Deep-level transient spectroscopy (DLTS) using Schottky barrier diodes (SBDs) is widely used for quantitative analysis of deep levels. This study focuses on the dependence of Schottky barrier height on apparent time constants and concentrations of electron traps in n-type GaN. DLTS using SBDs with various barrier heights was carried out. Experimental data show that large reverse leakage currents due to low barrier heights resulted in underestimation of time constants and concentrations. Theoretical calculations considering the impact of leakage currents reproduced experimental results well. Based on the calculations, we suggest a minimum required barrier height where accurate time constants and concentrations can be evaluated.Keito AoshimaMasahiro HoritaJun SudaAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115124-115124-6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Keito Aoshima Masahiro Horita Jun Suda Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy
description	Deep-level transient spectroscopy (DLTS) using Schottky barrier diodes (SBDs) is widely used for quantitative analysis of deep levels. This study focuses on the dependence of Schottky barrier height on apparent time constants and concentrations of electron traps in n-type GaN. DLTS using SBDs with various barrier heights was carried out. Experimental data show that large reverse leakage currents due to low barrier heights resulted in underestimation of time constants and concentrations. Theoretical calculations considering the impact of leakage currents reproduced experimental results well. Based on the calculations, we suggest a minimum required barrier height where accurate time constants and concentrations can be evaluated.
format	article
author	Keito Aoshima Masahiro Horita Jun Suda
author_facet	Keito Aoshima Masahiro Horita Jun Suda
author_sort	Keito Aoshima
title	Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy
title_short	Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy
title_full	Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy
title_fullStr	Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy
title_full_unstemmed	Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy
title_sort	effect of schottky barrier height on quantitative analysis of deep-levels in n-type gan by deep-level transient spectroscopy
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/f3d96455a139438ba98fcf08bcd2bd92
work_keys_str_mv	AT keitoaoshima effectofschottkybarrierheightonquantitativeanalysisofdeeplevelsinntypeganbydeepleveltransientspectroscopy AT masahirohorita effectofschottkybarrierheightonquantitativeanalysisofdeeplevelsinntypeganbydeepleveltransientspectroscopy AT junsuda effectofschottkybarrierheightonquantitativeanalysisofdeeplevelsinntypeganbydeepleveltransientspectroscopy
_version_	1718404666682769408

Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy

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