Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy
Deep-level transient spectroscopy (DLTS) using Schottky barrier diodes (SBDs) is widely used for quantitative analysis of deep levels. This study focuses on the dependence of Schottky barrier height on apparent time constants and concentrations of electron traps in n-type GaN. DLTS using SBDs with v...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/f3d96455a139438ba98fcf08bcd2bd92 |
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