MoTe<sub>2</sub> Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resul...

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Autores principales: Geun Yeol Bae, Jinsung Kim, Junyoung Kim, Siyoung Lee, Eunho Lee
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/f4c695ccf55b45e79ceb9bab325cc14d
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