MoTe<sub>2</sub> Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resul...

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Autores principales:	Geun Yeol Bae, Jinsung Kim, Junyoung Kim, Siyoung Lee, Eunho Lee
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	transition metal dichalcogenides 2D materials chemical vapor deposition phase contact resistance Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/f4c695ccf55b45e79ceb9bab325cc14d
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spelling	oai:doaj.org-article:f4c695ccf55b45e79ceb9bab325cc14d2021-11-25T18:29:56ZMoTe<sub>2</sub> Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation10.3390/nano111128052079-4991https://doaj.org/article/f4c695ccf55b45e79ceb9bab325cc14d2021-10-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/2805https://doaj.org/toc/2079-4991Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs’ surface. Here, we introduce a facile phase-tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi-metallic monoclinic (1T′) molybdenum ditelluride (MoTe<sub>2</sub>). The formation of ohmic contacts increases the charge carrier mobility of MoTe<sub>2</sub> field-effect transistor devices to 16.1 cm<sup>2</sup> V<sup>−1</sup>s<sup>−1</sup> with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large-area scaling for the creation of high-performance 2D electronic devices.Geun Yeol BaeJinsung KimJunyoung KimSiyoung LeeEunho LeeMDPI AGarticletransition metal dichalcogenides2D materialschemical vapor depositionphasecontact resistanceChemistryQD1-999ENNanomaterials, Vol 11, Iss 2805, p 2805 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	transition metal dichalcogenides 2D materials chemical vapor deposition phase contact resistance Chemistry QD1-999
spellingShingle	transition metal dichalcogenides 2D materials chemical vapor deposition phase contact resistance Chemistry QD1-999 Geun Yeol Bae Jinsung Kim Junyoung Kim Siyoung Lee Eunho Lee MoTe<sub>2</sub> Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation
description	Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs’ surface. Here, we introduce a facile phase-tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi-metallic monoclinic (1T′) molybdenum ditelluride (MoTe<sub>2</sub>). The formation of ohmic contacts increases the charge carrier mobility of MoTe<sub>2</sub> field-effect transistor devices to 16.1 cm<sup>2</sup> V<sup>−1</sup>s<sup>−1</sup> with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large-area scaling for the creation of high-performance 2D electronic devices.
format	article
author	Geun Yeol Bae Jinsung Kim Junyoung Kim Siyoung Lee Eunho Lee
author_facet	Geun Yeol Bae Jinsung Kim Junyoung Kim Siyoung Lee Eunho Lee
author_sort	Geun Yeol Bae
title	MoTe<sub>2</sub> Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation
title_short	MoTe<sub>2</sub> Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation
title_full	MoTe<sub>2</sub> Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation
title_fullStr	MoTe<sub>2</sub> Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation
title_full_unstemmed	MoTe<sub>2</sub> Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation
title_sort	mote<sub>2</sub> field-effect transistors with low contact resistance through phase tuning by laser irradiation
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/f4c695ccf55b45e79ceb9bab325cc14d
work_keys_str_mv	AT geunyeolbae motesub2subfieldeffecttransistorswithlowcontactresistancethroughphasetuningbylaserirradiation AT jinsungkim motesub2subfieldeffecttransistorswithlowcontactresistancethroughphasetuningbylaserirradiation AT junyoungkim motesub2subfieldeffecttransistorswithlowcontactresistancethroughphasetuningbylaserirradiation AT siyounglee motesub2subfieldeffecttransistorswithlowcontactresistancethroughphasetuningbylaserirradiation AT eunholee motesub2subfieldeffecttransistorswithlowcontactresistancethroughphasetuningbylaserirradiation
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MoTe<sub>2</sub> Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

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