Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor
Abstract A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS m...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2018
|
| Subjects: | |
| Online Access: | https://doaj.org/article/f5fb929f0a4d40e6a88bb87e1c7e967e |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!