Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

Fabrication of photodetector devices by selective etching of 2D materials can enable broadband detection. Here, the authors design mono- and multi-layer nano-bridge multi-heterojunction photodetectors based on MoS2 with high responsivities of 2.67 × 106 A/W and 1.65 × 104 A/W in the visible–infrared...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Ki Seok Kim, You Jin Ji, Ki Hyun Kim, Seunghyuk Choi, Dong-Ho Kang, Keun Heo, Seongjae Cho, Soonmin Yim, Sungjoo Lee, Jin-Hong Park, Yeon Sik Jung, Geun Young Yeom
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
Materias:
Q
Acceso en línea:https://doaj.org/article/f62d07bbb54d419fac39c2ce2a9b6298
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!