Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te5

The structural origin of the mid-gap states responsible for the time-dependent resistance drift in phase-change materials is still under debate. Here the authors use machine learning and density functional theory to identify the structural motifs of the mid-gap defects in the prototypical Ge2Sb2Te5...

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Auteurs principaux: Konstantinos Konstantinou, Felix C. Mocanu, Tae-Hoon Lee, Stephen R. Elliott
Format: article
Langue:EN
Publié: Nature Portfolio 2019
Sujets:
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Accès en ligne:https://doaj.org/article/f6363d560f3c49adbef58f134e3dfa03
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