Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te5

The structural origin of the mid-gap states responsible for the time-dependent resistance drift in phase-change materials is still under debate. Here the authors use machine learning and density functional theory to identify the structural motifs of the mid-gap defects in the prototypical Ge2Sb2Te5...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Konstantinos Konstantinou, Felix C. Mocanu, Tae-Hoon Lee, Stephen R. Elliott
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
Materias:
Q
Acceso en línea:https://doaj.org/article/f6363d560f3c49adbef58f134e3dfa03
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares