Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te5
The structural origin of the mid-gap states responsible for the time-dependent resistance drift in phase-change materials is still under debate. Here the authors use machine learning and density functional theory to identify the structural motifs of the mid-gap defects in the prototypical Ge2Sb2Te5...
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Autores principales: | Konstantinos Konstantinou, Felix C. Mocanu, Tae-Hoon Lee, Stephen R. Elliott |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2019
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Materias: | |
Acceso en línea: | https://doaj.org/article/f6363d560f3c49adbef58f134e3dfa03 |
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