Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers
Abstract The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understandin...
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Nature Portfolio
2021
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oai:doaj.org-article:f7264bb1bbb04927a645eab375c746fc2021-12-02T14:23:50ZReactive plasma cleaning and restoration of transition metal dichalcogenide monolayers10.1038/s41699-020-00197-72397-7132https://doaj.org/article/f7264bb1bbb04927a645eab375c746fc2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41699-020-00197-7https://doaj.org/toc/2397-7132Abstract The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understanding of the cleaning of “monolayer” TMD materials. In this study, we report on the use of downstream H2 plasma to clean the surface of monolayer WS2 grown by MOCVD. We demonstrate that high-temperature processing is essential, allowing to maximize the removal rate of polymers and to mitigate damage caused to the WS2 in the form of sulfur vacancies. We show that low temperature in situ carbonyl sulfide (OCS) soak is an efficient way to resulfurize the material, besides high-temperature H2S annealing. The cleaning processes and mechanisms elucidated in this work are tested on back-gated field-effect transistors, confirming that transport properties of WS2 devices can be maintained by the combination of H2 plasma cleaning and OCS restoration. The low-damage plasma cleaning based on H2 and OCS is very reproducible, fast (completed in a few minutes) and uses a 300 mm industrial plasma etch system qualified for standard semiconductor pilot production. This process is, therefore, expected to enable the industrial scale-up of 2D-based devices, co-integrated with silicon technology.Daniil MarinovJean-François de MarneffeQuentin SmetsGoutham ArutchelvanKristof M. BalEkaterina VoroninaTatyana RakhimovaYuri MankelevichSalim El KazziAnkit Nalin MehtaPieter-Jan WyndaeleMarkus Hartmut HeyneJianran ZhangPatrick C. WithSreetama BanerjeeErik C. NeytsInge AsselberghsDennis LinStefan De GendtNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021) |
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DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 |
| spellingShingle |
Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Daniil Marinov Jean-François de Marneffe Quentin Smets Goutham Arutchelvan Kristof M. Bal Ekaterina Voronina Tatyana Rakhimova Yuri Mankelevich Salim El Kazzi Ankit Nalin Mehta Pieter-Jan Wyndaele Markus Hartmut Heyne Jianran Zhang Patrick C. With Sreetama Banerjee Erik C. Neyts Inge Asselberghs Dennis Lin Stefan De Gendt Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers |
| description |
Abstract The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understanding of the cleaning of “monolayer” TMD materials. In this study, we report on the use of downstream H2 plasma to clean the surface of monolayer WS2 grown by MOCVD. We demonstrate that high-temperature processing is essential, allowing to maximize the removal rate of polymers and to mitigate damage caused to the WS2 in the form of sulfur vacancies. We show that low temperature in situ carbonyl sulfide (OCS) soak is an efficient way to resulfurize the material, besides high-temperature H2S annealing. The cleaning processes and mechanisms elucidated in this work are tested on back-gated field-effect transistors, confirming that transport properties of WS2 devices can be maintained by the combination of H2 plasma cleaning and OCS restoration. The low-damage plasma cleaning based on H2 and OCS is very reproducible, fast (completed in a few minutes) and uses a 300 mm industrial plasma etch system qualified for standard semiconductor pilot production. This process is, therefore, expected to enable the industrial scale-up of 2D-based devices, co-integrated with silicon technology. |
| format |
article |
| author |
Daniil Marinov Jean-François de Marneffe Quentin Smets Goutham Arutchelvan Kristof M. Bal Ekaterina Voronina Tatyana Rakhimova Yuri Mankelevich Salim El Kazzi Ankit Nalin Mehta Pieter-Jan Wyndaele Markus Hartmut Heyne Jianran Zhang Patrick C. With Sreetama Banerjee Erik C. Neyts Inge Asselberghs Dennis Lin Stefan De Gendt |
| author_facet |
Daniil Marinov Jean-François de Marneffe Quentin Smets Goutham Arutchelvan Kristof M. Bal Ekaterina Voronina Tatyana Rakhimova Yuri Mankelevich Salim El Kazzi Ankit Nalin Mehta Pieter-Jan Wyndaele Markus Hartmut Heyne Jianran Zhang Patrick C. With Sreetama Banerjee Erik C. Neyts Inge Asselberghs Dennis Lin Stefan De Gendt |
| author_sort |
Daniil Marinov |
| title |
Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers |
| title_short |
Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers |
| title_full |
Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers |
| title_fullStr |
Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers |
| title_full_unstemmed |
Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers |
| title_sort |
reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers |
| publisher |
Nature Portfolio |
| publishDate |
2021 |
| url |
https://doaj.org/article/f7264bb1bbb04927a645eab375c746fc |
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