DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond–GaN Interfaces

DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond–GaN Interfaces

Integration of diamond with GaN-based high-electron-mobility transistors improves thermal management, influencing the reliability, performance, and lifetime of GaN-based devices. The current GaN-on-diamond integration technology requires precise interface engineering and appropriate interfacial laye...

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Détails bibliographiques
Auteurs principaux: Malgorzata Sznajder, Roman Hrytsak
Format: article
Langue:EN
Publié: MDPI AG 2021
Sujets:
diamond crystal
gallium nitride (GaN)
adsorption
heterojunction
interface structure
defects
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Accès en ligne:https://doaj.org/article/f79858c7738e4e90aad829578516e9ca
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Internet

https://doaj.org/article/f79858c7738e4e90aad829578516e9ca

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