DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond–GaN Interfaces

Integration of diamond with GaN-based high-electron-mobility transistors improves thermal management, influencing the reliability, performance, and lifetime of GaN-based devices. The current GaN-on-diamond integration technology requires precise interface engineering and appropriate interfacial laye...

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Autores principales: Malgorzata Sznajder, Roman Hrytsak
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/f79858c7738e4e90aad829578516e9ca
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