Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite

Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite

In this study, the CsPbBrI<sub>2</sub> perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br<sup>+</sup> into the CsPbI<sub>3</sub> film, which solved the problem of insta...

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Detalles Bibliográficos
Autores principales: Wang Ke, Xiaoting Yang, Tongyu Liu
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
CsPbBrI<sub>2</sub> perovskite
non-volatile
resistance switching effect
memory device
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Acceso en línea:https://doaj.org/article/f894ee64abf04c05b5a6450aa0061602
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https://doaj.org/article/f894ee64abf04c05b5a6450aa0061602

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