Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite
In this study, the CsPbBrI<sub>2</sub> perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br<sup>+</sup> into the CsPbI<sub>3</sub> film, which solved the problem of insta...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/f894ee64abf04c05b5a6450aa0061602 |
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| Sumario: | In this study, the CsPbBrI<sub>2</sub> perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br<sup>+</sup> into the CsPbI<sub>3</sub> film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI<sub>2</sub> perovskite film, the Ag/CsPbBrI<sub>2</sub>/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI<sub>2</sub>/ITO memory device was measured under open-air conditions. The experimental results show that the surface of the CsPbBrI<sub>2</sub> perovskite film is uniform and dense, and the Ag/CsPbBrI<sub>2</sub>/ITO memory device has an order of magnitude resistance-on-off ratio after 500 cycles of cyclic voltage. This study shows that Ag/CsPbBrI<sub>2</sub>/ITO memory devices based on CsPbBrI<sub>2</sub> perovskite films have potential applications in the field of non-volatile memory devices. At the same time, the transient properties of the CsPbBrI<sub>2</sub> film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors. |
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