Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri2 Perovskite

In this study, the CsPbBrI2 perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br+ into the CsPbI3 film, which solved the problem of insta...

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Autores principales:	Wang Ke, Xiaoting Yang, Tongyu Liu
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	CsPbBrI<sub>2</sub> perovskite non-volatile resistance switching effect memory device Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/f894ee64abf04c05b5a6450aa0061602
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id	oai:doaj.org-article:f894ee64abf04c05b5a6450aa0061602
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spelling	oai:doaj.org-article:f894ee64abf04c05b5a6450aa00616022021-11-11T18:09:36ZResistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite10.3390/ma142166291996-1944https://doaj.org/article/f894ee64abf04c05b5a6450aa00616022021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6629https://doaj.org/toc/1996-1944In this study, the CsPbBrI<sub>2</sub> perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br<sup>+</sup> into the CsPbI<sub>3</sub> film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI<sub>2</sub> perovskite film, the Ag/CsPbBrI<sub>2</sub>/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI<sub>2</sub>/ITO memory device was measured under open-air conditions. The experimental results show that the surface of the CsPbBrI<sub>2</sub> perovskite film is uniform and dense, and the Ag/CsPbBrI<sub>2</sub>/ITO memory device has an order of magnitude resistance-on-off ratio after 500 cycles of cyclic voltage. This study shows that Ag/CsPbBrI<sub>2</sub>/ITO memory devices based on CsPbBrI<sub>2</sub> perovskite films have potential applications in the field of non-volatile memory devices. At the same time, the transient properties of the CsPbBrI<sub>2</sub> film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors.Wang KeXiaoting YangTongyu LiuMDPI AGarticleCsPbBrI<sub>2</sub> perovskitenon-volatileresistance switching effectmemory deviceTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6629, p 6629 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	CsPbBrI<sub>2</sub> perovskite non-volatile resistance switching effect memory device Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	CsPbBrI<sub>2</sub> perovskite non-volatile resistance switching effect memory device Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Wang Ke Xiaoting Yang Tongyu Liu Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite
description	In this study, the CsPbBrI<sub>2</sub> perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br<sup>+</sup> into the CsPbI<sub>3</sub> film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI<sub>2</sub> perovskite film, the Ag/CsPbBrI<sub>2</sub>/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI<sub>2</sub>/ITO memory device was measured under open-air conditions. The experimental results show that the surface of the CsPbBrI<sub>2</sub> perovskite film is uniform and dense, and the Ag/CsPbBrI<sub>2</sub>/ITO memory device has an order of magnitude resistance-on-off ratio after 500 cycles of cyclic voltage. This study shows that Ag/CsPbBrI<sub>2</sub>/ITO memory devices based on CsPbBrI<sub>2</sub> perovskite films have potential applications in the field of non-volatile memory devices. At the same time, the transient properties of the CsPbBrI<sub>2</sub> film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors.
format	article
author	Wang Ke Xiaoting Yang Tongyu Liu
author_facet	Wang Ke Xiaoting Yang Tongyu Liu
author_sort	Wang Ke
title	Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite
title_short	Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite
title_full	Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite
title_fullStr	Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite
title_full_unstemmed	Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite
title_sort	resistance switching effect of memory device based on all-inorganic cspbbri<sub>2</sub> perovskite
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/f894ee64abf04c05b5a6450aa0061602
work_keys_str_mv	AT wangke resistanceswitchingeffectofmemorydevicebasedonallinorganiccspbbrisub2subperovskite AT xiaotingyang resistanceswitchingeffectofmemorydevicebasedonallinorganiccspbbrisub2subperovskite AT tongyuliu resistanceswitchingeffectofmemorydevicebasedonallinorganiccspbbrisub2subperovskite
_version_	1718431979659067392

Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite

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