Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite
In this study, the CsPbBrI<sub>2</sub> perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br<sup>+</sup> into the CsPbI<sub>3</sub> film, which solved the problem of insta...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/f894ee64abf04c05b5a6450aa0061602 |
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