Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3

Semiconductor research is undergoing transformative changes thanks to the discovery and development of novel materials. The authors disclose the role of electron-phonon interaction and impurity scattering in a novel ultrawide bandgap perovskite oxide, paving the way for new applications in high-powe...

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Autores principales: Tristan K. Truttmann, Jin-Jian Zhou, I-Te Lu, Anil Kumar Rajapitamahuni, Fengdeng Liu, Thomas E. Mates, Marco Bernardi, Bharat Jalan
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/f89c6ff0d905485191f23a0b15d2268a
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