Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3
Semiconductor research is undergoing transformative changes thanks to the discovery and development of novel materials. The authors disclose the role of electron-phonon interaction and impurity scattering in a novel ultrawide bandgap perovskite oxide, paving the way for new applications in high-powe...
Guardado en:
Autores principales: | Tristan K. Truttmann, Jin-Jian Zhou, I-Te Lu, Anil Kumar Rajapitamahuni, Fengdeng Liu, Thomas E. Mates, Marco Bernardi, Bharat Jalan |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/f89c6ff0d905485191f23a0b15d2268a |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Spin excitations in metallic kagome lattice FeSn and CoSn
por: Yaofeng Xie, et al.
Publicado: (2021) -
Two-dimensionality of metallic surface conduction in Co3Sn2S2 thin films
por: Junya Ikeda, et al.
Publicado: (2021) -
Interplay between population density and mobility in determining the spread of epidemics in cities
por: Surendra Hazarie, et al.
Publicado: (2021) -
Universal mobility characteristics of graphene originating from charge scattering by ionised impurities
por: Jonathan H. Gosling, et al.
Publicado: (2021) -
Magnetotransport of dirty-limit van Hove singularity quasiparticles
por: Yang Xu, et al.
Publicado: (2021)