Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3
Semiconductor research is undergoing transformative changes thanks to the discovery and development of novel materials. The authors disclose the role of electron-phonon interaction and impurity scattering in a novel ultrawide bandgap perovskite oxide, paving the way for new applications in high-powe...
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Auteurs principaux: | Tristan K. Truttmann, Jin-Jian Zhou, I-Te Lu, Anil Kumar Rajapitamahuni, Fengdeng Liu, Thomas E. Mates, Marco Bernardi, Bharat Jalan |
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Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
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Sujets: | |
Accès en ligne: | https://doaj.org/article/f89c6ff0d905485191f23a0b15d2268a |
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