Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
Abstract Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research efforts for the realization of electrically pumped group IV lasers monolithically integrated on Si have significantly intensified. This led to epitaxial studies of GeSn/SiGeSn hetero- and nanostructu...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/f994af529de945e6a1b05a825d5eca3d |
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