Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Abstract Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research efforts for the realization of electrically pumped group IV lasers monolithically integrated on Si have significantly intensified. This led to epitaxial studies of GeSn/SiGeSn hetero- and nanostructu...

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Autores principales:	Denis Rainko, Zoran Ikonic, Nenad Vukmirović, Daniela Stange, Nils von den Driesch, Detlev Grützmacher, Dan Buca
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Good Carrier Confinement Direct Bandgap Indirect Band Gap Multi-quantum Well (MQW) Band Discontinuity Medicine R Science Q
Acceso en línea:	https://doaj.org/article/f994af529de945e6a1b05a825d5eca3d
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spelling	oai:doaj.org-article:f994af529de945e6a1b05a825d5eca3d2021-12-02T15:08:11ZInvestigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures10.1038/s41598-018-33820-12045-2322https://doaj.org/article/f994af529de945e6a1b05a825d5eca3d2018-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-33820-1https://doaj.org/toc/2045-2322Abstract Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research efforts for the realization of electrically pumped group IV lasers monolithically integrated on Si have significantly intensified. This led to epitaxial studies of GeSn/SiGeSn hetero- and nanostructures, where charge carrier confinement strongly improves the radiative emission properties. Based on recent experimental literature data, in this report we discuss the advantages of GeSn/SiGeSn multi quantum well and quantum dot structures, aiming to propose a roadmap for group IV epitaxy. Calculations based on 8-band k∙p and effective mass method have been performed to determine band discontinuities, the energy difference between Γ- and L-valley conduction band edges, and optical properties such as material gain and optical cross section. The effects of these parameters are systematically analyzed for an experimentally achievable range of Sn (10 to 20 at.%) and Si (1 to 10 at.%) contents, as well as strain values (−1 to 1%). We show that charge carriers can be efficiently confined in the active region of optical devices for experimentally acceptable Sn contents in both multi quantum well and quantum dot configurations.Denis RainkoZoran IkonicNenad VukmirovićDaniela StangeNils von den DrieschDetlev GrützmacherDan BucaNature PortfolioarticleGood Carrier ConfinementDirect BandgapIndirect Band GapMulti-quantum Well (MQW)Band DiscontinuityMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-13 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Good Carrier Confinement Direct Bandgap Indirect Band Gap Multi-quantum Well (MQW) Band Discontinuity Medicine R Science Q
spellingShingle	Good Carrier Confinement Direct Bandgap Indirect Band Gap Multi-quantum Well (MQW) Band Discontinuity Medicine R Science Q Denis Rainko Zoran Ikonic Nenad Vukmirović Daniela Stange Nils von den Driesch Detlev Grützmacher Dan Buca Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
description	Abstract Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research efforts for the realization of electrically pumped group IV lasers monolithically integrated on Si have significantly intensified. This led to epitaxial studies of GeSn/SiGeSn hetero- and nanostructures, where charge carrier confinement strongly improves the radiative emission properties. Based on recent experimental literature data, in this report we discuss the advantages of GeSn/SiGeSn multi quantum well and quantum dot structures, aiming to propose a roadmap for group IV epitaxy. Calculations based on 8-band k∙p and effective mass method have been performed to determine band discontinuities, the energy difference between Γ- and L-valley conduction band edges, and optical properties such as material gain and optical cross section. The effects of these parameters are systematically analyzed for an experimentally achievable range of Sn (10 to 20 at.%) and Si (1 to 10 at.%) contents, as well as strain values (−1 to 1%). We show that charge carriers can be efficiently confined in the active region of optical devices for experimentally acceptable Sn contents in both multi quantum well and quantum dot configurations.
format	article
author	Denis Rainko Zoran Ikonic Nenad Vukmirović Daniela Stange Nils von den Driesch Detlev Grützmacher Dan Buca
author_facet	Denis Rainko Zoran Ikonic Nenad Vukmirović Daniela Stange Nils von den Driesch Detlev Grützmacher Dan Buca
author_sort	Denis Rainko
title	Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
title_short	Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
title_full	Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
title_fullStr	Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
title_full_unstemmed	Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
title_sort	investigation of carrier confinement in direct bandgap gesn/sigesn 2d and 0d heterostructures
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/f994af529de945e6a1b05a825d5eca3d
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Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

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