Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film
Abstract Phase change memory (PCM) is a promising nonvolatile memory to reform current commercial computing system. Inhibiting face-centered cubic (f-) to hexagonal (h-) phase transition of Ge2Sb2Te5 (GST) thin film is essential for realizing high-density, high-speed, and low-power PCM. Although the...
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| Auteurs principaux: | , , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
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Nature Portfolio
2017
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| Accès en ligne: | https://doaj.org/article/f9cd9527bdef48b3b05be3179abc21d5 |
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