Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film

Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film

Abstract Phase change memory (PCM) is a promising nonvolatile memory to reform current commercial computing system. Inhibiting face-centered cubic (f-) to hexagonal (h-) phase transition of Ge2Sb2Te5 (GST) thin film is essential for realizing high-density, high-speed, and low-power PCM. Although the...

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Autores principales: Yonghui Zheng, Yan Cheng, Rong Huang, Ruijuan Qi, Feng Rao, Keyuan Ding, Weijun Yin, Sannian Song, Weili Liu, Zhitang Song, Songlin Feng
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/f9cd9527bdef48b3b05be3179abc21d5
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