Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique propert...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Tristan Smołka, Katarzyna Posmyk, Maja Wasiluk, Paweł Wyborski, Michał Gawełczyk, Paweł Mrowiński, Monika Mikulicz, Agata Zielińska, Johann Peter Reithmaier, Anna Musiał, Mohamed Benyoucef
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
MBE growth
symmetric InAs/InP quantum dots
3rd telecom window
internal quantum efficiency
carrier dynamics
thermal stability of emission
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Acceso en línea:https://doaj.org/article/faf175fd0ff64589b5305e192e1140ae
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Internet

https://doaj.org/article/faf175fd0ff64589b5305e192e1140ae

Ejemplares similares