Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique propert...

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Autores principales:	Tristan Smołka, Katarzyna Posmyk, Maja Wasiluk, Paweł Wyborski, Michał Gawełczyk, Paweł Mrowiński, Monika Mikulicz, Agata Zielińska, Johann Peter Reithmaier, Anna Musiał, Mohamed Benyoucef
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	MBE growth symmetric InAs/InP quantum dots 3rd telecom window internal quantum efficiency carrier dynamics thermal stability of emission Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/faf175fd0ff64589b5305e192e1140ae
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spelling	oai:doaj.org-article:faf175fd0ff64589b5305e192e1140ae2021-11-11T17:50:54ZOptical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy10.3390/ma142162701996-1944https://doaj.org/article/faf175fd0ff64589b5305e192e1140ae2021-10-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6270https://doaj.org/toc/1996-1944We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.Tristan SmołkaKatarzyna PosmykMaja WasilukPaweł WyborskiMichał GawełczykPaweł MrowińskiMonika MikuliczAgata ZielińskaJohann Peter ReithmaierAnna MusiałMohamed BenyoucefMDPI AGarticleMBE growthsymmetric InAs/InP quantum dots3rd telecom windowinternal quantum efficiencycarrier dynamicsthermal stability of emissionTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6270, p 6270 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	MBE growth symmetric InAs/InP quantum dots 3rd telecom window internal quantum efficiency carrier dynamics thermal stability of emission Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	MBE growth symmetric InAs/InP quantum dots 3rd telecom window internal quantum efficiency carrier dynamics thermal stability of emission Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Tristan Smołka Katarzyna Posmyk Maja Wasiluk Paweł Wyborski Michał Gawełczyk Paweł Mrowiński Monika Mikulicz Agata Zielińska Johann Peter Reithmaier Anna Musiał Mohamed Benyoucef Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy
description	We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.
format	article
author	Tristan Smołka Katarzyna Posmyk Maja Wasiluk Paweł Wyborski Michał Gawełczyk Paweł Mrowiński Monika Mikulicz Agata Zielińska Johann Peter Reithmaier Anna Musiał Mohamed Benyoucef
author_facet	Tristan Smołka Katarzyna Posmyk Maja Wasiluk Paweł Wyborski Michał Gawełczyk Paweł Mrowiński Monika Mikulicz Agata Zielińska Johann Peter Reithmaier Anna Musiał Mohamed Benyoucef
author_sort	Tristan Smołka
title	Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy
title_short	Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy
title_full	Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy
title_fullStr	Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy
title_full_unstemmed	Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy
title_sort	optical quality of inas/inp quantum dots on distributed bragg reflector emitting at 3rd telecom window grown by molecular beam epitaxy
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/faf175fd0ff64589b5305e192e1140ae
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Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

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