Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique propert...

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Autores principales:	Tristan Smołka, Katarzyna Posmyk, Maja Wasiluk, Paweł Wyborski, Michał Gawełczyk, Paweł Mrowiński, Monika Mikulicz, Agata Zielińska, Johann Peter Reithmaier, Anna Musiał, Mohamed Benyoucef
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	MBE growth symmetric InAs/InP quantum dots 3rd telecom window internal quantum efficiency carrier dynamics thermal stability of emission Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/faf175fd0ff64589b5305e192e1140ae
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Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

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