Modeling of temperature regimes of thin film gas sensitive devices

This paper presents results of the modeling of the temperature distribution in a chip of thin film gas sensor, operating at high temperatures (150-1000o C), required to provide high sensitivity and selectivity to target gases. Analysis of thermal regimes of such chip was ca...

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Autor principal:	Dmitriev, Serghei
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/fb19c84774b24ddd935db9b7b5046e30
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id	oai:doaj.org-article:fb19c84774b24ddd935db9b7b5046e30
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spelling	oai:doaj.org-article:fb19c84774b24ddd935db9b7b5046e302021-11-21T12:13:29ZModeling of temperature regimes of thin film gas sensitive devices2537-63651810-648Xhttps://doaj.org/article/fb19c84774b24ddd935db9b7b5046e302005-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3066https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365This paper presents results of the modeling of the temperature distribution in a chip of thin film gas sensor, operating at high temperatures (150-1000o C), required to provide high sensitivity and selectivity to target gases. Analysis of thermal regimes of such chip was carried out on the base of model of plate with local source of heat. It was found that substrate heat conductivity is most influencing parameter, determining both temperature distribution in chip and also the electrical power consumption decreasing. The example of realized chips designed in accordance with results of modeling is presented. The results of modeling are compared with experimental data. Dmitriev, SergheiD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 1, Pp 90-93 (2005)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Dmitriev, Serghei Modeling of temperature regimes of thin film gas sensitive devices
description	This paper presents results of the modeling of the temperature distribution in a chip of thin film gas sensor, operating at high temperatures (150-1000o C), required to provide high sensitivity and selectivity to target gases. Analysis of thermal regimes of such chip was carried out on the base of model of plate with local source of heat. It was found that substrate heat conductivity is most influencing parameter, determining both temperature distribution in chip and also the electrical power consumption decreasing. The example of realized chips designed in accordance with results of modeling is presented. The results of modeling are compared with experimental data.
format	article
author	Dmitriev, Serghei
author_facet	Dmitriev, Serghei
author_sort	Dmitriev, Serghei
title	Modeling of temperature regimes of thin film gas sensitive devices
title_short	Modeling of temperature regimes of thin film gas sensitive devices
title_full	Modeling of temperature regimes of thin film gas sensitive devices
title_fullStr	Modeling of temperature regimes of thin film gas sensitive devices
title_full_unstemmed	Modeling of temperature regimes of thin film gas sensitive devices
title_sort	modeling of temperature regimes of thin film gas sensitive devices
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2005
url	https://doaj.org/article/fb19c84774b24ddd935db9b7b5046e30
work_keys_str_mv	AT dmitrievserghei modelingoftemperatureregimesofthinfilmgassensitivedevices
_version_	1718419163673788416

Modeling of temperature regimes of thin film gas sensitive devices

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