Drain Induced Barrier Widening and Reverse Short Channel Effects in Tunneling FETs: Investigation and Analysis

In this paper, using calibrated TCAD simulations, we demonstrate how the performance of a Tunneling FET (TFET) can be improved by using a new phenomenon called drain induced barrier widening (DIBW) at the source-channel junction. Our results indicate that TFETs in which DIBW dominates exhibit a stee...

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Autores principales:	Mamidala Karthik Ram, Neha Tiwari, Dawit Burusie Abdi, Sneh Saurabh
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Drain induced barrier widening (DIBW) gate-on-drain overlap OFF-state current reverse short channel effects subthreshold swing TCAD simulation Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/fd1719d153a84db3884bfc9a7ef41dde
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spelling	oai:doaj.org-article:fd1719d153a84db3884bfc9a7ef41dde2021-11-18T00:07:07ZDrain Induced Barrier Widening and Reverse Short Channel Effects in Tunneling FETs: Investigation and Analysis2169-353610.1109/ACCESS.2021.3125856https://doaj.org/article/fd1719d153a84db3884bfc9a7ef41dde2021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9605574/https://doaj.org/toc/2169-3536In this paper, using calibrated TCAD simulations, we demonstrate how the performance of a Tunneling FET (TFET) can be improved by using a new phenomenon called drain induced barrier widening (DIBW) at the source-channel junction. Our results indicate that TFETs in which DIBW dominates exhibit a steep subthreshold swing (≈35 mV/dec) and a low OFF-state current (<inline-formula> <tex-math notation="LaTeX">$\approx 10^{-16}\text{A}/\mu \text{m}$ </tex-math></inline-formula>) without affecting the ON-state current. We also show that TFETs exhibit a reverse short channel effect due to an increase in the tunneling width at the source-channel junction.Mamidala Karthik RamNeha TiwariDawit Burusie AbdiSneh SaurabhIEEEarticleDrain induced barrier widening (DIBW)gate-on-drain overlapOFF-state currentreverse short channel effectssubthreshold swingTCAD simulationElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Access, Vol 9, Pp 150366-150372 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Drain induced barrier widening (DIBW) gate-on-drain overlap OFF-state current reverse short channel effects subthreshold swing TCAD simulation Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Drain induced barrier widening (DIBW) gate-on-drain overlap OFF-state current reverse short channel effects subthreshold swing TCAD simulation Electrical engineering. Electronics. Nuclear engineering TK1-9971 Mamidala Karthik Ram Neha Tiwari Dawit Burusie Abdi Sneh Saurabh Drain Induced Barrier Widening and Reverse Short Channel Effects in Tunneling FETs: Investigation and Analysis
description	In this paper, using calibrated TCAD simulations, we demonstrate how the performance of a Tunneling FET (TFET) can be improved by using a new phenomenon called drain induced barrier widening (DIBW) at the source-channel junction. Our results indicate that TFETs in which DIBW dominates exhibit a steep subthreshold swing (≈35 mV/dec) and a low OFF-state current (<inline-formula> <tex-math notation="LaTeX">$\approx 10^{-16}\text{A}/\mu \text{m}$ </tex-math></inline-formula>) without affecting the ON-state current. We also show that TFETs exhibit a reverse short channel effect due to an increase in the tunneling width at the source-channel junction.
format	article
author	Mamidala Karthik Ram Neha Tiwari Dawit Burusie Abdi Sneh Saurabh
author_facet	Mamidala Karthik Ram Neha Tiwari Dawit Burusie Abdi Sneh Saurabh
author_sort	Mamidala Karthik Ram
title	Drain Induced Barrier Widening and Reverse Short Channel Effects in Tunneling FETs: Investigation and Analysis
title_short	Drain Induced Barrier Widening and Reverse Short Channel Effects in Tunneling FETs: Investigation and Analysis
title_full	Drain Induced Barrier Widening and Reverse Short Channel Effects in Tunneling FETs: Investigation and Analysis
title_fullStr	Drain Induced Barrier Widening and Reverse Short Channel Effects in Tunneling FETs: Investigation and Analysis
title_full_unstemmed	Drain Induced Barrier Widening and Reverse Short Channel Effects in Tunneling FETs: Investigation and Analysis
title_sort	drain induced barrier widening and reverse short channel effects in tunneling fets: investigation and analysis
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/fd1719d153a84db3884bfc9a7ef41dde
work_keys_str_mv	AT mamidalakarthikram draininducedbarrierwideningandreverseshortchanneleffectsintunnelingfetsinvestigationandanalysis AT nehatiwari draininducedbarrierwideningandreverseshortchanneleffectsintunnelingfetsinvestigationandanalysis AT dawitburusieabdi draininducedbarrierwideningandreverseshortchanneleffectsintunnelingfetsinvestigationandanalysis AT snehsaurabh draininducedbarrierwideningandreverseshortchanneleffectsintunnelingfetsinvestigationandanalysis
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Drain Induced Barrier Widening and Reverse Short Channel Effects in Tunneling FETs: Investigation and Analysis

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