Drain Induced Barrier Widening and Reverse Short Channel Effects in Tunneling FETs: Investigation and Analysis
In this paper, using calibrated TCAD simulations, we demonstrate how the performance of a Tunneling FET (TFET) can be improved by using a new phenomenon called drain induced barrier widening (DIBW) at the source-channel junction. Our results indicate that TFETs in which DIBW dominates exhibit a stee...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/fd1719d153a84db3884bfc9a7ef41dde |
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